ISR research accomplishments
Real-Time Metrology for Chemical Processes in Semiconductor Manufacturing
Research team
Gary W.
Rubloff, John
N. Kidder, Jr., T. Gougousi, Y. Xu, C. Tilford (NIST),
R. Ellefson (INFICON Inc.), L.
Tedder & G. Lu (‘93-’95 with Rubloff at NCSU)
Accomplishment
Gas sensors
deliver real-time chemical state information during dynamic process
cycles. Chemical vapor deposition: W, polySi, SiO2. Mass spectrometry, acoustic velocity
in gases. Product generation & reactant
depletion signals provide rapid feedback of deposition rate &
thickness.
Tungsten CVD Process using WF6/H2.
Reactant depletion (H2) and product
generation (HF) observed. Basis for wafer
state metrology from dynamic process sensing.
Real-Time Metrology from Chemical Sensing
Real-time chemical sensors
provide rapid thickness metrology to drive advanced process control, both run-to-run and real time.
Impact
Fault Management
|
Process Mechanisms
|
The first demonstrations of in-situ, real-time wafer state metrology in chemical processes for semiconductor manufacturing. Rapid wafer state metrology essential for advanced process control and rapid yield learning, key elements for maintaining the industry’s growth pattern: 25-30 percent per year cost reduction per function. Close collaboration with sensor supplier INFICON Inc. for technology transfer.
For more information
G. W. Rubloff et. al., J. Vac. Sci. Technol. A14 (2), 267-270 (Mar/Apr 1996); B 17 (4), 1417-23 (Jul/Aug 1999); and in press.
