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MOCVD
In collaboration with the Northrop Grumman Corporation, we are investigating models of epitaxial growth of GaN and SiC films; novel uniformity control approaches including the Nearest Uniformity Producing Profile (NUPP) and response surface model-based approaches are under investigation.
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Modular simulation software
is under development based on the object-oriented features of MATLAB. Called mdpsas (modular distributed parameter system analysis and simulation), it combines weighted residual method software with modular Newton-Raphson techniques to enable rapid model development and testing.
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WaferTools
is a MATLAB toolbox that builds on our modular simulation software and is applicable to developing response surface models from full wafer maps.
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The Programmable Reactor
Design concepts for highly-controllable CVD reactors are under investigation through simulation and the construction of a number of prototype reactor systems. The design is based on a segmented showerhead that allows 2D spatial control of reactant gas composition across the wafer surface. Current research focuses on segmented reactor designs for large-substrate and combinatorial CVD.
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ALD
Multiscale simulation techniques are under development for Atomic Layer Deposition systems with a goal of understanding the potential of combinatorial ALD.
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Solar energy
We are exploring the feasibility of extending our combinatorial thin film processing techniques to solar materials; other solar material processing projects are underway including multiscale modeling of the silicon ingot slicing process.
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